High-Purity Alumina Substrate (99.5% Alumina)
With an alumina purity of 99.5% or higher, this ceramic substrate offers exceptional surface smoothness, making it ideal for fine-pitch wiring patterns and thin-film circuit formation. It also provides outstanding electrical insulation, high heat resistance, and high mechanical strength. These properties make it suitable for demanding applications such as power devices, automotive components, LED lighting, and various electronic devices requiring insulated heat-dissipation substrates.

Features
With a high alumina purity of 99.5% and minimal internal porosity, this substrate offers excellent electrical properties and mechanical strength. It features high dielectric breakdown voltage, high volume resistivity, and low dielectric loss, making it well-suited for high-frequency applications. Its high flexural strength allows for thin substrates that resist cracking, providing excellent handling. The fine particle structure ensures a smooth surface, ideal for fine circuit formation and coating. Even under high-temperature conditions, its physical and chemical properties remain stable, and with a thermal expansion coefficient close to silicon, it also offers superior thermal conductivity.
Material Characteristics
| ITEM | UNIT | TEST CONDITIONS | 99.5% Alumina Substrate | 96% Alumina Substrate | |
|---|---|---|---|---|---|
| NA-995 | NA-96 | ||||
| MATERIAL | ― | ― | 99.5%Al2O3 | 96%Al2O3 | |
| COLOR | ― | ― | WHITE | WHITE | |
| DENSITY | g/cm3 | ― | 3.9 | 3.7 | |
| WATER ABSORPTION | % | ― | 0 | 0 | |
| MECHANICAL PROPERTIES | 3 POINT BENDING STRENGTH | MPa | ― | 450 | 400 |
| SURFACE ROUGHNESS Ra | μm | 0.1 | 0.3 | ||
| THERMAL PROPERTIES | THERMAL EXPANSION COEFFICIENT | 10-6/℃ | RT~400℃ | 6.2 | 6.8 |
| RT~800℃ | 7.5 | 7.8 | |||
| THERMAL CONDUCTIVITY | W/(m・K) | 20℃ | 32 | 23 | |
| ELECTRICAL PROPERTIES | DIELECTRIC CONSTANT | ― | 1MHz | ― | 9.2 |
| 10GHz | 9.8 | ― | |||
| DIELECTRICTANGENT | ― | 1MHz | ― | 10×10-4 | |
| 10GHz | 3×10-5 | ― | |||
| VOLUME RESISTIVITY | Ω・cm | 25℃ | >1014 | >1014 | |
| WITHSTANDING VOLTAGE | kV/mm | ― | >20 | >20 | |
Design Guidelines
| ITEM | UNIT | STANDARD PROCESSED |
|---|---|---|
| DIMENSIONS | mm | 170×170 |
| THICKNESS | mm | 0.25~1.0 |
Catalog Download
Product Use Cases
- Thin-Film Fine-Pitch Wiring Substrate
- Plasma Generation Equipment
- Chip Resistors